DocumentCode :
1564583
Title :
Etching Mechanisms of Fluoroelastomer Seals and Performance Characteristics
Author :
Alexander, W. Brock ; Foggiato, John
Author_Institution :
Greene ,Tweed & Co., Kulpsville, PA
fYear :
2008
Firstpage :
123
Lastpage :
126
Abstract :
In this paper, we report on seal performance and degradation mechanisms under a range of plasma processing conditions for several fluoroelastomer materials. Both direct and indirect plasma sources were used and the location of the test samples was varied to impact the chemical versus physical etching mechanisms. Perfluoroelastomer o-rings were exposed to NF3, O2, CF4, or SF6 plasmas. The weight loss after 90 minutes of exposure was measured. Surface roughening of fluoroelastomer seals occurred under different exposure conditions. EDS was employed to analyze particulate residue that formed during the testing and will be discussed in regards to particle generation and contamination. Surfaces were examined with optical microscopy and SEM. Etching mechanisms are discussed.
Keywords :
etching; optical microscopy; scanning electron microscopy; sealing materials; surface roughness; SEM; fluoroelastomer seals; indirect plasma sources; optical microscopy; particle contamination; particle generation; particulate residue; physical etching mechanisms; plasma processing conditions; surface roughening; Etching; Plasma applications; Plasma chemistry; Plasma measurements; Plasma sources; Rough surfaces; Seals; Surface contamination; Surface roughness; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
Conference_Location :
Cambridge, MA
ISSN :
1078-8743
Print_ISBN :
978-1-4244-1964-7
Electronic_ISBN :
1078-8743
Type :
conf
DOI :
10.1109/ASMC.2008.4529037
Filename :
4529037
Link To Document :
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