Title :
Simulation of nanoscale structures based on carbon materials
Author :
Abramov, I.I. ; Kolomejtseva, N.V. ; Romanova, I.A.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
Nanoscale structures based on carbon materials are simulated using the developed numerical models. A functionally integrated structure combining resonant tunneling diode and field-effect transistor based on single carbon nanotube (RTD-FET) is studied. It is found that RTD-FET will have significantly different N-shaped current-voltage characteristics depending on the chirality of the used nanotube. Current-voltage characteristics of a resonant tunneling nanostructure based on graphene are also calculated.
Keywords :
carbon nanotube field effect transistors; carbon nanotubes; chirality; graphene; numerical analysis; resonant tunnelling diodes; semiconductor device models; N-shaped current-voltage characteristics; RTD-FET; carbon materials; current-voltage characteristics; field-effect transistor; functionally integrated structure; graphene; nanoscale structure simulation; nanotube chirality; numerical models; resonant tunneling diode; single carbon nanotube; Nanostructured materials;
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
DOI :
10.1109/CRMICO.2014.6959636
