DocumentCode
156469
Title
Simulation of the influence of impact ionization process on the current noise in deep submicron silicon diode
Author
Borzdov, A.V. ; Borzdov, V.M. ; Busliuk, V.V.
Author_Institution
Belarusian State Univ., Minsk, Belarus
fYear
2014
fDate
7-13 Sept. 2014
Firstpage
805
Lastpage
806
Abstract
Ensemble Monte Carlo simulation has been used to simulate charge carrier transport in the deep submicron silicon diode with n+-n-n+ structure. The influence of impact ionization process on static current-voltage characteristics as well as current noise has been studied.
Keywords
Monte Carlo methods; impact ionisation; semiconductor device models; semiconductor diodes; silicon; Monte Carlo simulation; charge carrier transport; current noise; deep submicron silicon diode; impact ionization process; static current-voltage characteristic; Educational institutions;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-412-5
Type
conf
DOI
10.1109/CRMICO.2014.6959640
Filename
6959640
Link To Document