• DocumentCode
    156472
  • Title

    Study of the excitation mode of plasma waves in 2D plasma of GaAs-AlxGa1???xAs heterostructure at low temperatures

  • Author

    Murav´ev, V.V. ; Tamelo, A.A. ; Mishenko, V.N. ; Molodkin, D.F.

  • Author_Institution
    Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
  • fYear
    2014
  • fDate
    7-13 Sept. 2014
  • Firstpage
    809
  • Lastpage
    810
  • Abstract
    On the basis of the statistical simulation method the study of exaltation mode of plasma waves in 2D plasma of heterostructures and the main characteristics of physical process of charge carriers transfer, was carried out at low temperatures. Algorithms and programs for the study of excitation mode of plasma waves in 2D plasma heterostructures. Plasma frequency in GaAs / AlxGa1-xAs heterostructure was calculated, its value is about 3.58 THz.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; plasma waves; statistical analysis; terahertz waves; 2D plasma heterostructures; GaAs-AlxGa1-xAs; charge carriers transfer; plasma frequency; plasma wave excitation mode; statistical simulation method;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-412-5
  • Type

    conf

  • DOI
    10.1109/CRMICO.2014.6959642
  • Filename
    6959642
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=156472