Title :
A bipolar integrated silicon pressure sensor
Author :
Moon Key Lee ; Bo Na Lee ; Seung Min Jung
Author_Institution :
Dept. of Electron. Eng., Yonsei Univ., Seoul, South Korea
Abstract :
A bipolar integrated piezoresistive-type silicon pressure sensor with frequency-modulated output where frequency is related to the applied pressure has been developed. The sensor peripheral circuits were fabricated in a standard bipolar process and the shaping of the sensor was accomplished using an EDP anisotropic etchant. Signal conditioning circuitry consists of a band-gap voltage reference circuit, a differential amplifier, and a current-controlled oscillator. This circuit is designed to stabilize change in sensitivity due to variations in temperature and supply voltage.<>
Keywords :
bipolar integrated circuits; electric sensing devices; piezoresistance; pressure measurement; pressure transducers; silicon; Si sensor; anisotropic etchant; band-gap voltage reference circuit; bipolar integrated piezoresistive-type; change in sensitivity; current-controlled oscillator; differential amplifier; elemental semiconductor; frequency-modulated output; peripheral circuits; pressure sensor; signal conditioning circuitry; Anisotropic magnetoresistance; Circuits; Differential amplifiers; Etching; Frequency; Photonic band gap; Piezoresistance; Silicon; Temperature sensors; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.148868
