DocumentCode
1564952
Title
Resistivity measurement of epitaxially grown silicon layers: The influence of native oxide growth
Author
Bitzer, Th ; Baumgartl, J. ; Krzych, G. ; Tsidilkovski, E.
Author_Institution
Infineon Technol., Villach
fYear
2008
Firstpage
378
Lastpage
381
Abstract
A four-point probe is commonly used to measure sheet resistance of epitaxial Si layers. Our studies show that measurement repeatability of the sheet resistance of 7 mum thick Si layers is strongly reduced due to the presence of interface-trapped charges. We demonstrate that the ac-surface photo-voltage method combined with the photo-oxidation and corona charging techniques results in an excellent measurement repeatability of specific resistivity.
Keywords
corona; elemental semiconductors; epitaxial growth; silicon; ac-surface photvoltage method; corona charging techniques; epitaxially grown silicon layers; four-point probe; interface-trapped charges; measurement repeatability; native oxide growth; photooxidation charging techniques; resistivity measurement; sheet resistance; Conductivity measurement; Current measurement; Electrical resistance measurement; Epitaxial layers; Probes; Silicon; Substrates; Thickness measurement; Time measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
Conference_Location
Cambridge, MA
ISSN
1078-8743
Print_ISBN
978-1-4244-1964-7
Electronic_ISBN
1078-8743
Type
conf
DOI
10.1109/ASMC.2008.4529075
Filename
4529075
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