Title :
"Transpinnor": A new giant magnetoresistive spin-valve device
Author :
Torok, E.J. ; Zurn, S. ; Sheppard, L.E. ; Spitzer, R. ; Seongtae Bae ; Judy, J.H. ; Egelhoff, W.F. ; Chen, P.J.
Author_Institution :
Integrated Magnetoelectronics Co., Minneapolis, MN, USA
Abstract :
Summary form only given. "Transpinnor", a new multifunctional active solid-state magneto-electronic device utilizing giant magnetoresistance (GMR) spin-valves, has been fabricated and investigated using closed-flux structures of metallic pseudo spin-valves and anti-ferromagnetic oxide exchange-biased bottom spin-valves. Figure 1 shows a single-input "transpinnor" as a modified Wheatstone bridge circuit composed of four GMR spin-valves whose resistances can be changed by magnetic fields from currents flowing in one or more overlaying striplines that are not resistively connected. A "transpinnor" can be used as a transformer that has flat response down to d.c., an amplifier, a differential amplifier, and as logic gates such as AND, OR, NOR, NOT, and XOR. Applications of "transpinnors" include non-volatile data storage, electronics, and logic for an all-metal GMR magnetic random access memory MRAM chip (SpinRAM). The patterned dual-input "transpinnor" differential amplifier shown in Fig. 2 has a voltage output of 2/spl sim/3 mV and a rise time of 14 /spl mu/s as shown in Fig. 3. "Transpinnors" can also be used as high current-drivers since this output loaded by a 1 /spl Omega/ resistor can supply 2/spl sim/3 mA for sensing or biasing of an integrated CMOS-MRAM chip. Indeed, a full SpinRAM memory chip can be designed and built using only GMR "transpinnors" for word selection, digit selection, and differential sense amplifiers.
Keywords :
CMOS memory circuits; antiferromagnetism; bridge circuits; differential amplifiers; driver circuits; giant magnetoresistance; logic gates; magnetic storage; magnetoelectronics; magnetoresistance; random-access storage; spin valves; strip line circuits; transformers; 1 ohm; 14 mus; 2 to 3 mA; 2 to 3 mV; AND logic gates; GMR spin-valve resistances; MRAM chip; NOR gates; NOT gates; OR gates; SpinRAM memory chip; XOR gates; all-metal GMR magnetic random access memory; amplifier output voltage; amplifier rise time; anti-ferromagnetic oxide exchange-biased bottom spin-valves; chip sensing; differential sense amplifiers; digit selection; flat response transformers; giant magnetoresistance spin-valves; high current-drivers; integrated CMOS-MRAM chip biasing; magnetic field induced currents; metallic pseudo spin-valve closed-flux structures; multifunctional active solid-state magneto-electronic devices; nonresistively connected overlaying striplines; nonvolatile data storage; patterned dual-input differential amplifiers; resistor loaded output; single-input transpinnor modified Wheatstone bridge circuit; transpinnor GMR spin-valve devices; word selection; Antiferromagnetic materials; Bridge circuits; Differential amplifiers; Giant magnetoresistance; Logic gates; Magnetic devices; Magnetic fields; Nonvolatile memory; Solid state circuits; Stripline;
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
DOI :
10.1109/INTMAG.2002.1000768