• DocumentCode
    1565011
  • Title

    Advanced Dopant Metrology for 45 nm and Beyond

  • Author

    Salnik, Alex ; Shaughnessy, Derrick ; Nicolaides, Lena

  • Author_Institution
    KLA-Tencor Corp., San Jose, CA
  • fYear
    2008
  • Firstpage
    404
  • Lastpage
    406
  • Abstract
    An overview of the advanced (45 nm and beyond) ion implant and USJ metrology applications using the modulated optical reflectance (MOR) technology is provided.
  • Keywords
    ion implantation; semiconductor doping; USJ metrology applications; dopant metrology; ion implant; modulated optical reflectance technology; Annealing; Implants; Laser excitation; Metrology; Monitoring; Optical modulation; Plasma measurements; Plasma waves; Probes; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
  • Conference_Location
    Cambridge, MA
  • ISSN
    1078-8743
  • Print_ISBN
    978-1-4244-1964-7
  • Electronic_ISBN
    1078-8743
  • Type

    conf

  • DOI
    10.1109/ASMC.2008.4529081
  • Filename
    4529081
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1565011