Multilevel magnetoresistive random access memory written at Curie point

Summary form only given. The storage density of MRAMs can be increased via either reducing the cell size or increasing the number of bits stored in one cell. A three-level and six-state multilevel MRAM has been proposed. However, it is difficult to write a cell independently in an MRAM array using this structure. Here we propose a multilevel MRAM that writes data at the Curie point and reads data using the angular-dependent magnetoresistance. The former has been proposed by Beech et al. (2000) for a spin-valve based single level MRAM. In our structure, a pinned ferromagnetic layer (CoFe/IrMn) is used as the recording layer in a MTJ device.