Title :
Thermal stability of exchange-biased magnetic tunnel junctions with stabilizing layer
Author :
Matsukawa, N. ; Odagawa, A. ; Sugita, Yosuke ; Kawashima, Yoshiya ; Morinaga, Y. ; Satomi, M. ; Hiramoto, M. ; Kuwata, J.
Author_Institution :
Matsushita Electr. Ind. Co., Ltd., Kyoto, Japan
Abstract :
Summary form only given. The applications of magnetic tunnel junctions (MTJs) for devices with CMOS such as MRAM need a high tunneling magnetoresistance ratio (TMR) and good thermal stability over 400/spl deg/C. Exchange-biased MTJs with CoFe and Mn-X antiferromagnetic layer show large TMR but annealing over 350/spl deg/C degrades the TMR due to diffusing Mn. Exchange-biased MTJs with a magnetic stabilizing layer (MS-layer) of magnetic metal alloy, with structures of PtMn/CoFe/Ru/CoFe/(MS-layer)/AlOx/(MS-layer)/CoFe, were investigated and showed good thermal stability up to 400/spl deg/C. The samples were prepared by magnetron sputtering and the tunnel barrier formed in situ.
Keywords :
annealing; antiferromagnetic materials; cobalt alloys; diffusion barriers; exchange interactions (electron); ferromagnetic materials; iron alloys; magnetoresistive devices; manganese alloys; platinum alloys; sputtered coatings; thermal stability; tunnelling magnetoresistance; 350 degC; 400 degC; AlO; MRAM; PtMn-CoFe-Ru-CoFe; TMR; annealing; antiferromagnetic layer; exchange-biased MTJs; exchange-biased magnetic tunnel junctions; high tunneling magnetoresistance ratio; magnetic stabilizing layer; magnetron sputtering; stabilizing layer; thermal stability; tunnel barrier; Amorphous magnetic materials; Amorphous materials; Annealing; Magnetic anisotropy; Magnetic materials; Magnetic tunneling; Perpendicular magnetic anisotropy; Thermal stability; Tunneling magnetoresistance; Voltage;
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
DOI :
10.1109/INTMAG.2002.1000780
