CAD: The numerical and analytical methods combined for the analysis of IC´s thermal fields

The problem of microelectronic device thermal field analysis has been formalized. The presented method of the initial and boundary problem formalization makes it possible to take account of various boundary conditions and to carry out adaptation of the received mathematical model to the object of designing and operation conditions by CAD methods. The combination of numerical and analytical methods has been developed for solution of three-dimensional parabolic equations. The said combination makes it possible to receive both stationary and nonstationary solutions as well as to approximate in boundary conditions along z coordinate the nonhomogeneity of functions and their derivatives along x,y coordinates. The testing (investigation) of the computational accuracy and the adequacy of the received mathematical models and algorithms has been carried out. The software system of microelectronic devices thermal design has been developed, the system making it possible to decrease the development time and to improve the quality of microelectronic devices