Development perspectives for radiation-hard shf transmit/receive LSI´s for applications of SOI CMOS technology

Author

Nazarova, Galina N. ; Elesin, Vadim V. ; Nikiforov, A.Yu. ; Kuznetsov, Alexander G. ; Usachev, N.A. ; Chukov, George V.

Author_Institution

Moscow Eng. Phys. Inst., Nat. Res. Nucl. Univ. MEPhI, Moscow, Russia

fYear

2014

fDate

7-13 Sept. 2014

Firstpage

856

Lastpage

857

Abstract

The present paper concerns the study of SOI MOS transistors RF performance for 0.35-μm domestic digital SOI CMOS technology. A specialized library of RF elements and comprehensive set of SOI RF IP-blocks, including mixers, VCO´s, amplifiers, ADC, PLL and frequency divider have been designed and measured. The possibility to design radiation-hard RF transceiver LSI´s based on the domestic SOI CMOS technology is confirmed as per the total dose, dose rate and SEE testing results.

Keywords

CMOS digital integrated circuits; CMOS integrated circuits; analogue-digital conversion; frequency dividers; large scale integration; mixers (circuits); phase locked loops; radiation hardening; radio transceivers; silicon-on-insulator; voltage-controlled oscillators; ADC; LSI; MOS transistors; PLL; RF elements; SHF transmit/receive; SOI RF IP-blocks; VCO; amplifiers; domestic digital SOI CMOS technology; frequency divider; mixers; radiation-hard RF transceiver; silicon-on-insulator; size 0.35 mum; Phase locked loops; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-966-335-412-5

Type

conf

DOI

10.1109/CRMICO.2014.6959663

Filename

6959663