DocumentCode
156514
Title
Total ionizing dose hardness of microwave electronics
Author
Kalashnikov, O.A. ; Elesin, Vadim V. ; Gromov, D.V.
Author_Institution
Nat. Res. Nucl., Univ. MEPhI, Moscow, Russia
fYear
2014
fDate
7-13 Sept. 2014
Firstpage
862
Lastpage
863
Abstract
A review of microwave electronics total ionizing dose (TID) test results is presented. It is shown that microwave electronics is usually characterized by high TID hardness as compared to electronic components of other functional types. However, there are microwave components with relatively low hardness, these parts contain CMOS elements.
Keywords
CMOS integrated circuits; microwave integrated circuits; radiation hardening (electronics); CMOS elements; electronic components; high TID hardness; microwave components; microwave electronics; total ionizing dose hardness; CMOS integrated circuits; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-412-5
Type
conf
DOI
10.1109/CRMICO.2014.6959666
Filename
6959666
Link To Document