DocumentCode :
1565147
Title :
Electron spin resonance in two-dimensional electron gases
Author :
Rippard, W.H. ; Russek, S.E. ; Therani, S. ; Rizzo, N.
Author_Institution :
Nat. Inst. of Stand. & Technol., Boulder, CO, USA
fYear :
2002
Abstract :
Summary form only given. While optical pump-probe techniques have proven quite successful in measuring the spin-dynamics and lifetimes of electrons in bulk samples, they cannot be easily applied to submicrometer structures and are limited to a large number of spins. New experimental techniques are needed to measure the spin dynamics of a small number of electrons in confined structures. Here, we discuss the design and initial experimental efforts using electrical detection of the electron spin resonance in AlGaAs and InGaAs based 2DEG transistors. We have fabricated high electron mobility transistors with integrated microwave lines in order to carry out electrical spin dynamics measurements. Using this novel approach we have broadband excitation capabilities and are applying the measurements to micrometer sized FET structures. The devices allow the electric field and microwave magnetic field excitations to be directly controlled, allowing the carrier concentration, the g-factor, and spin populations of the devices to be manipulated. The structures are easily modified to allow optical measurements of spin precession within the electron gas. These detection techniques should be capable of measuring a small number of spins (<10/sup /spl and//6) in a single, confined electron spin packet. The possibilities of using the technique to create spin-traps and measure the precessional dynamics of the trapped electrons in real time are also addressed.
Keywords :
III-V semiconductors; aluminium compounds; carrier lifetime; electron spin polarisation; electron traps; gallium arsenide; high electron mobility transistors; indium compounds; paramagnetic resonance; two-dimensional electron gas; 2DEG transistors; AlGaAs; InGaAs; carrier concentration; electric field excitations; electron lifetimes; electron spin resonance; g-factor; high electron mobility transistors; integrated microwave lines; microwave magnetic field excitations; optical pump-probe techniques; precessional dynamics; spin populations; spin-dynamics; spin-traps; submicrometer structures; two-dimensional electron gases; Electron optics; Gases; HEMTs; Indium gallium arsenide; MODFETs; Magnetic field measurement; Microwave FETs; Microwave transistors; Optical pumping; Paramagnetic resonance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
Type :
conf
DOI :
10.1109/INTMAG.2002.1000784
Filename :
1000784
Link To Document :
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