DocumentCode :
1565166
Title :
Oblique Hanle effect for reliable assessment of electrical spin injection
Author :
Motsnyi, V.F. ; Safarov, V.I. ; De Boeck, Jo ; Das, Joydeep ; Van Roy, W. ; Goovaerts, E. ; Borghs, G.
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2002
Abstract :
Summary form only given. One important aspect of spintronic devices is the effective electrical spin injection into a semiconductor. Optical methods have proven their efficiency for creation and detection of a spin polarized electrons in III-V semiconductors. Due to the high refractive index of such materials the detected light characterizes only the component of electron spin perpendicular to the surface. However, a vast amount of common ferromagnetic thin films, interesting as sources for electrical spin injection, show in-plane magnetic anisotropy, thus making direct optical measurements practically impossible. In order to overcome this limitation we introduce the oblique Hanle effect (OHE) technique to assess spin injection. The application of the OHE to assess successful electrical spin injection from ferromagnetic contact into semiconductors will be presented.
Keywords :
Hanle effect; III-V semiconductors; ferromagnetism; interface magnetism; magnetic anisotropy; magnetoelectronics; spin polarised transport; III-V semiconductors; OHE; electrical spin injection; ferromagnetic thin film; in-plane magnetic anisotropy; oblique Hanle effect; spintronic devices; Electron optics; III-V semiconductor materials; Magnetic materials; Magnetoelectronics; Optical films; Optical polarization; Optical refraction; Optical variables control; Refractive index; Spin polarized transport;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
Type :
conf
DOI :
10.1109/INTMAG.2002.1000786
Filename :
1000786
Link To Document :
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