Study of the ???memory effect??? in 3-cm band gunn diodes under irradiation by fast neutrons

Irradiation by fast neutrons provokes parameters degradation of semiconductor devices. On the other hand, operating conditions of the devices may lead to partial (or complete) annealing of defects introduced by ionizing radiation. The main aim - investigation of the “memory effect” in the Gunn diodes of the 3-cm wavelength range was carried out on the basis of n⁺-n-n⁺⁺ GaAs structures under irradiation by fast neutrons. As a result of researches the existence of “memory effect” is established, the appearance of which leads to an increase radiation resistance under subsequent irradiation. The possible mechanisms of “memory effect” are considered.