DocumentCode
156520
Title
Change in radiating power of the algainp heterostructures under irradiation by fast neutrons
Author
Orlova, K.N. ; Gradoboev, A.V.
Author_Institution
Yurga Technol. Inst., Tomsk Polytech. Univ., Kemerovo, Russia
fYear
2014
fDate
7-13 Sept. 2014
Firstpage
874
Lastpage
875
Abstract
It is established, that radiating power is reduced in three stages under irradiation by fast neutrons. There are areas of high, average and low electron injection in the active area of the light-emitting diodes. The final stage of the reducing process of light output power is a low electron injection.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; neutron effects; semiconductor heterojunctions; AlGaInP; AlGaInP heterostructures; active area; average electron injection area; fast neutrons; high electron injection area; light output power; light-emitting diodes; low electron injection area; radiating power; Atomic measurements; RNA;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-412-5
Type
conf
DOI
10.1109/CRMICO.2014.6959672
Filename
6959672
Link To Document