Title :
Dynamics of development of thermal processes in semiconductor structures at the local effects of microwave radiation
Author :
Taran, E.P. ; Gordienko, Yu.E. ; Slipchenko, N.I.
Author_Institution :
Taurida Nat. V. I. Vernadsky Univ., Simferopol, Ukraine
Abstract :
The present paper concerns the basic principles of the model of local effects of microwave radiation in semiconductor structures. The validity of the proposed model is based on the method of finite-difference time-domain (FDTD) is shown. The influence of radius of a spherical probe on the distribution and values of the field intensity in the axis of semiconductor structures is determined. Dynamics of development of thermal processes in the local region of semiconductor structures in a continuous mode with relation to electrophysical parameters on temperature are obtained.
Keywords :
finite difference time-domain analysis; radiation effects; semiconductors; continuous mode; electrophysical parameters; field intensity distribution; finite-difference time-domain method; local microwave radiation effects; local region; semiconductor structure axis; spherical probe radius; thermal process development dynamics; Silicon;
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
DOI :
10.1109/CRMICO.2014.6959674
