DocumentCode
156523
Title
The radiation-hardened source of reference voltage of negative polarity for silicon bipolar-JFET technology
Author
Starchenko, Evgeniy I. ; Prokopenko, Nikolay N.
Author_Institution
Dept. “Inf. Syst. & Radioeng.”, Don State Tech. Univ., Rostov-on-Don, Russia
fYear
2014
fDate
7-13 Sept. 2014
Firstpage
880
Lastpage
881
Abstract
The present paper concerns the circuit methods for the construction of the temperature-stable voltage references with the use of base of npn-type and bipolar JFET transistors. The new circuitry of the voltage references is suggested for bi-FET technology which renders possible to create microelectronic products with the radiation hardness up to 1 Mrad and F=1013-1014 n/cm2 acceptable for many applications.
Keywords
JFET circuits; bipolar transistor circuits; elemental semiconductors; radiation hardening (electronics); reference circuits; silicon; Si; bi-FET technology; circuit methods; microelectronic products; negative polarity; npn-type JFET transistors; radiation-hardened source; silicon bipolar-JFET technology; temperature-stable voltage references; Regulators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-412-5
Type
conf
DOI
10.1109/CRMICO.2014.6959675
Filename
6959675
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