• DocumentCode
    156529
  • Title

    Triangle-based process hotspot classification with dummification in EUVL

  • Author

    Po-Hsun Wu ; Che-Wen Chen ; Chr-Ruo Wu ; Tsung-Yi Ho

  • Author_Institution
    Dept. of Comput. Sci. & Inf. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • fYear
    2014
  • fDate
    28-30 April 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    As technology node advances, Extreme Ultraviolet Lithography (EUVL) is regarded as the most promising technology for improving the lithographic printability. However, there are still several challenges in EUVL like the most critical flare effect that causes patterning distortions. As a result, dummy fills are added to a layout (i.e., dummification) to compensate the flare effect. Although dummy fills are used to alleviate the flare effect, process hotspots still cannot be fully eliminated and are essential to be detected in the early design stages. Pattern matching is one of the most popular and widely-used technique to detect the process hotspots. However, existing pattern-matching-based algorithms may not effectively detect all process hotspots under the consideration of dummification. In this paper, we propose a two-stage triangle-based algorithm for process hotspot classification while considering the impact of dummification in EUVL. Experimental results show that our proposed algorithm is very effective and efficient compared with the state-of-the-art process hotspot classification algorithm.
  • Keywords
    integrated circuit layout; pattern matching; ultraviolet lithography; EUVL; critical flare effect; dummification; dummy fills; extreme ultraviolet lithography; lithographic printability; pattern matching; patterning distortions; triangle-based detail matching; triangle-based process hotspot classification; Accuracy; Algorithm design and analysis; Classification algorithms; Equations; Layout; Pattern matching; Ultraviolet sources;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, Automation and Test (VLSI-DAT), 2014 International Symposium on
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/VLSI-DAT.2014.6834860
  • Filename
    6834860