DocumentCode
156532
Title
Keep-Out-Zone analysis for three-dimensional ICs
Author
Said, Mostafa ; El-Sayed, M. ; Mehdipour, Farhad ; Miyakawa, N.
Author_Institution
Dept. of Electron. & Commun., Egypt-Japan Univ. of Sci. & Technol. (E-JUST), Alexandria, Egypt
fYear
2014
fDate
28-30 April 2014
Firstpage
1
Lastpage
4
Abstract
One of main challenges of 3D-integration is the area overhead which has two main causes: first the huge TSV diameter which is usually in the range of microns, and the second reason is the Keep-Out-Zone (KOZ) overhead due to the high induced thermal stresses during fabrication. The area overhead besides the fabrication process itself inversely affects the overall yield and fabrication cost, so the increase in area will reduce the yield and increase the fabrication cost. In this paper, the effect of KOZ overhead on the overall area, yield, and fabrication cost is investigated. Also various parameters that might change KOZ overhead are examined. We show that the share of area overhead caused by KOZ is considerably higher compared to that of TSVs. Further, the impact of KOZ is considered for obtaining more accurate estimation on W2W overall yield and fabrication cost of a 3D-IC.
Keywords
integrated circuit modelling; integrated circuit yield; thermal stresses; three-dimensional integrated circuits; 3D integration; KOZ overhead; TSV; area overhead; fabrication cost; keep-out-zone analysis; thermal stresses; three-dimensional integrated circuits; through silicon via; Fabrication; Multiplexing; Silicon; Stress; Thermal stresses; Three-dimensional displays; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, Automation and Test (VLSI-DAT), 2014 International Symposium on
Conference_Location
Hsinchu
Type
conf
DOI
10.1109/VLSI-DAT.2014.6834862
Filename
6834862
Link To Document