A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs

Author

Santarelli, Alberto ; Cignani, Rafael ; Gibiino, Gian Piero ; Niessen, Daniel ; Traverso, Pier Andrea ; Florian, Corrado ; Schreurs, Dominique M. M.-P ; Filicori, Fabio

Author_Institution

Dept. of Electr., Electron. & Inf. Eng. “Guglielmo Marconi” (DEI), Univ. of Bologna, Bologna, Italy

Volume

24

Issue

2

fYear

2014

fDate

Feb. 2014

Firstpage

132

Lastpage

134

Abstract

Standard dynamic characterization methods based on periodic narrow-pulse low duty-cycle excitation waveforms provide suboptimal I/V curves when used along with GaN field effect transistors (FETs), due to complex nonlinear charge trapping effects. Thus, a double-pulse technique for the dynamic characterization of GaN FETs is here presented. The double-pulsed I/V characteristics are shown to be not only isothermal but also corresponding to a fixed charge trapping state.

Keywords

III-V semiconductors; field effect transistors; gallium compounds; wide band gap semiconductors; GaN; GaN FET; complex nonlinear charge trapping effects; double-pulse technique; dynamic I/V characterization; field effect transistors; fixed charge trapping state; periodic narrow-pulse low duty-cycle excitation waveforms; standard dynamic characterization methods; Charge carrier processes; Current measurement; Field effect transistors; Gallium nitride; Logic gates; Pulse measurements; Standards; Electrothermal effects; energy states; field effect transistors (FETs); gallium nitride; pulse measurements;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2013.2290216

Filename

6679290