DocumentCode
1565777
Title
Resistivity reliability of tunneling magnetoresistive heads
Author
Seongtae Bae ; I-Fei Tsu ; Davis, M. ; Nowak, J.J. ; Judy, J.H.
Author_Institution
University of Minnesota
fYear
2002
Firstpage
168
Lastpage
168
Abstract
Summary form only given. The electrical reliability of tunneling magnetoresistive (TMR) read heads has been investigated in terms of breakdown voltage[ 11 and electrical open failures[2] under constant biasing-current. The breakdown voltage is strongly dependent on duration of the applied voltage step, and ambient temperature.
Keywords
Conductivity; Frequency; Magnetic field measurement; Magnetic heads; Magnetic noise; Magnetic sensors; Noise figure; Noise measurement; Temperature sensors; Tunneling magnetoresistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location
Amsterdam, The Netherlands
Print_ISBN
0-7803-7365-0
Type
conf
DOI
10.1109/INTMAG.2002.1000844
Filename
1000844
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