DocumentCode :
1565876
Title :
Thermal Impedance Extraction Technique for Power MOSFETs
Author :
López, Toni ; Elferich, Reinhold
Author_Institution :
Philips Res. Lab., Aachen
fYear :
2007
Firstpage :
2140
Lastpage :
2146
Abstract :
This paper investigates proposals for advances in thermal characterisation techniques of power MOSFET packages. The basic contributions are focused on improving the performance of existing and well-known methods for thermal impedance extraction so as to allow for modelling the high thermal dynamic range of the power device. It means to effectively extend the transient thermal impedance curve to shorter pulse widths. To make this possible, a measurement technique is proposed that aims at overcoming two basic limitations of conventional techniques: the bandwidth response of the temperature sensing means and the accuracy of the power pulses injected into the device for heating up. Experimental results show the effectiveness of the method to measure transient thermal curves of short power pulses and derive corresponding parameters of a lumped model.
Keywords :
power MOSFET; power MOSFET packages; power device; thermal impedance extraction technique; transient thermal curve measurement; Bandwidth; Dynamic range; Impedance; MOSFETs; Measurement techniques; Packaging; Proposals; Pulse measurements; Space vector pulse width modulation; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 2007. PESC 2007. IEEE
Conference_Location :
Orlando, FL
ISSN :
0275-9306
Print_ISBN :
978-1-4244-0654-8
Electronic_ISBN :
0275-9306
Type :
conf
DOI :
10.1109/PESC.2007.4342338
Filename :
4342338
Link To Document :
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