• DocumentCode
    1565916
  • Title

    Three-Phase Ac Buck Rectifier using Normally-On SiC JFETs at 150 kHz Switching Frequency

  • Author

    Cass, Callaway J. ; Burgos, Rolando ; Wang, Fred ; Boroyevich, Dushan

  • Author_Institution
    Virginia Tech., Blacksburg
  • fYear
    2007
  • Firstpage
    2162
  • Lastpage
    2167
  • Abstract
    For many applications of high-performance three- phase AC converters, silicon carbide (SiC) switching devices promise breakthroughs in performance and power density. The SiC JFET technology is maturing, and will likely be the first SiC power switch available for applications requiring blocking voltages on the order of 1 kV. In this paper, a 2 kW three-phase buck rectifier with 150 kHz switching frequency is presented. The SiC buck rectifier uses prototype 1200 V SiC JFETs, as well as SiC Schottky barrier diodes (SBDs). The fast switching and low loss of the SiC JFET enables the achievement of a high switching frequency that is difficult to achieve with traditional silicon devices.
  • Keywords
    junction gate field effect transistors; rectifiers; silicon compounds; JFET; Schottky barrier diodes; power density; silicon carbide; switching frequency; three-phase AC buck rectifier; JFETs; Prototypes; Rectifiers; Schottky barriers; Schottky diodes; Silicon carbide; Silicon devices; Switching converters; Switching frequency; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 2007. PESC 2007. IEEE
  • Conference_Location
    Orlando, FL
  • ISSN
    0275-9306
  • Print_ISBN
    978-1-4244-0654-8
  • Electronic_ISBN
    0275-9306
  • Type

    conf

  • DOI
    10.1109/PESC.2007.4342342
  • Filename
    4342342