DocumentCode
1565916
Title
Three-Phase Ac Buck Rectifier using Normally-On SiC JFETs at 150 kHz Switching Frequency
Author
Cass, Callaway J. ; Burgos, Rolando ; Wang, Fred ; Boroyevich, Dushan
Author_Institution
Virginia Tech., Blacksburg
fYear
2007
Firstpage
2162
Lastpage
2167
Abstract
For many applications of high-performance three- phase AC converters, silicon carbide (SiC) switching devices promise breakthroughs in performance and power density. The SiC JFET technology is maturing, and will likely be the first SiC power switch available for applications requiring blocking voltages on the order of 1 kV. In this paper, a 2 kW three-phase buck rectifier with 150 kHz switching frequency is presented. The SiC buck rectifier uses prototype 1200 V SiC JFETs, as well as SiC Schottky barrier diodes (SBDs). The fast switching and low loss of the SiC JFET enables the achievement of a high switching frequency that is difficult to achieve with traditional silicon devices.
Keywords
junction gate field effect transistors; rectifiers; silicon compounds; JFET; Schottky barrier diodes; power density; silicon carbide; switching frequency; three-phase AC buck rectifier; JFETs; Prototypes; Rectifiers; Schottky barriers; Schottky diodes; Silicon carbide; Silicon devices; Switching converters; Switching frequency; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2007. PESC 2007. IEEE
Conference_Location
Orlando, FL
ISSN
0275-9306
Print_ISBN
978-1-4244-0654-8
Electronic_ISBN
0275-9306
Type
conf
DOI
10.1109/PESC.2007.4342342
Filename
4342342
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