Title :
Survey on High-Temperature Packaging Materials for SiC-Based Power Electronics Modules
Author :
Coppola, L. ; Huff, D. ; Wang, F. ; Burgos, R. ; Boroyevich, D.
Author_Institution :
Virginia Polytech. Inst. & State Univ., Blacksburg
Abstract :
High temperature SiC devices need the materials for device packages also capable of working at higher temperature than those for Si devices. This paper presents a selection of materials that are potentially suitable for use in high temperature package assembly, including die attach, substrate, interconnections, encapsulation, case, heat spreader and heat sink. The temperature under consideration is up to 250degC, corresponding to the need of many applications, including automobiles and aircraft.
Keywords :
heat sinks; materials science; microassembling; power semiconductor devices; semiconductor device packaging; silicon compounds; substrates; wide band gap semiconductors; case material; device packages; die attach; encapsulation material; heat sink; heat spreader; high temperature devices; high-temperature packaging materials; interconnections material; materials selection; power electronics modules; substrate material; Aerospace materials; Assembly; Automotive materials; Electronics packaging; Encapsulation; Heat sinks; Microassembly; Power electronics; Silicon carbide; Temperature;
Conference_Titel :
Power Electronics Specialists Conference, 2007. PESC 2007. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-0654-8
Electronic_ISBN :
0275-9306
DOI :
10.1109/PESC.2007.4342356
