Title :
Reliability characterization of a Ferroelectric Random Access Memory embedded within 130nm CMOS
Author :
Rodriguez, J. A. ; Remack, K. A. ; Gertas, J. ; Boku, K. ; Udayakumar, K. R. ; Summerfelt, S.R. ; Shinn ; Haider, Abrar ; Madan, S. ; McAdams, H. ; Moise, T. S. ; Bailey, R. ; Eliason, J. ; Depner, M. ; Kim, Dongkyu ; Staubs, P.
Author_Institution :
Texas Instruments Inc., Dallas, 75243 USA
Abstract :
Reliability data is presented for a 4Mb Ferroelectric Random Access Memory (F-RAM) embedded within a 130nm CMOS process. Write/read endurance in the device exhibits stable intrinsic bit properties through 2.7x1013 cycles. Data retention demonstrates 10 year, 85°C operating life. No fails were observed with full-chip endurance test to 108 cycles followed by 1,000 hours of data retention bake at 125°C. Robust process reliability is demonstrated with no fails at 125°C operating life test.
Keywords :
CMOS process; Capacitors; Copper; Degradation; Dielectric measurements; Ferroelectric materials; Random access memory; Stress measurement; Temperature; Testing;
Conference_Titel :
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location :
Santa Re, NM, USA
Print_ISBN :
978-1-4244-2744-4
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2008.4688162
