Title :
The FMR behavior of Fe single layer
Author :
Yu, Clare C. ; Chen, M. ; Chiu, P.S. ; Hung, D.S. ; Liou, Yi-Shing ; Lee, S.F. ; Tsai, C.S. ; Yao, Y.D.
Author_Institution :
Inst. of Phys., Acad. Sinica, Taipei, Taiwan
Abstract :
Summary form only given. GaAs(001)/ Fe 40nm/ Ag 2nm epitaxial films were fabricated by MBE technique. The main epitaxial relationship is GaAs(001)[110]/Fe(001)[110]/Ag(001)[100] for the deposition temperature of iron, Tg ⩾ 100°C. From the study of longitudinal magneto-optical Kerr effect, we observed two-step magnetic switching behavior along Fe[l10] and [1-10]. This indicates that these films have a strong crystalline induced biaxial magnetic anisotropy. Interestingly, for Tg ⩽ 1OO°C, the images of atomic force microscopy show that there are many surface defects with height~ lOnm and lateral dimension~ l0Onm on the film surface, as shown in Fig. 1, and the defect density drops rapidly while increasing the Tg. For example, the defect density for Tg= 50°C, 100°C and 200°C is 37, 18 and 0 per μm2.
Keywords :
Kerr magneto-optical effect; atomic force microscopy; ferromagnetic materials; ferromagnetic resonance; iron; magnetic anisotropy; magnetic epitaxial layers; magnetic switching; molecular beam epitaxial growth; surface morphology; surface topography; 10 nm; 100 degC; 100 nm; 200 degC; 50 degC; FMR behavior; Fe; Fe single layer; GaAs; MBE; atomic force microscopy; defect density; longitudinal magneto-optical Kerr effect; strong crystalline induced biaxial magnetic anisotropy; surface defects; two-step magnetic switching behavior; Atomic force microscopy; Electromagnetic wave absorption; Iron; Magnetic anisotropy; Magnetic films; Magnetic resonance; Magnetic switching; Microwave devices; Microwave theory and techniques; Perpendicular magnetic anisotropy;
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
DOI :
10.1109/INTMAG.2002.1000933
