DocumentCode :
1566868
Title :
A compression layer for NAND type flash memory systems
Author :
Huang, Wen-Tzeng ; Chen, Chun-Ta ; Chen, Yen-Sheng ; Chen, Chin-Hsing
Author_Institution :
National Taipei Univ. of Technol., Taiwan
Volume :
1
fYear :
2005
Firstpage :
599
Abstract :
Storage devices of embedded systems must have the characteristics of small size, great capacity, low-power consumption, lightweight, non-volatility, and vibration resistance. The NAND type flash memory, briefly denoted by NandFlash, is one of the more often-used storage devices. In terms of unit price, its cost is several dozen to hundred times more expensive than the traditional hard-disk (HD) since its storage space is limited. Therefore, to increase the storage space of NandFlash is great significance. In this paper, we improved the compression layer for NandFlash, which can be coordinated with the X-RL algorithm, to avoid overhead and reduce the degree of internal fragmentation in the compressed data pages. Hence, our proposed method can improve the compression rate. In the reading phase, we use the consecutive memory allocation method, which can reduce the superfluous time caused by non-consecutive access. Therefore, our architecture is meaningful and practical for embedded system applications.
Keywords :
data compression; embedded systems; flash memories; storage allocation; NandFlash; X-RL algorithm; compression layer; consecutive memory allocation; embedded system; nand type flash memory systems; storage devices; Cellular phones; Compression algorithms; Costs; Digital audio players; Embedded system; Flash memory; High definition video; Kernel; Nonvolatile memory; Writing; Compression Algorithm; Embedded system; NandFlash; X-RL;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Information Technology and Applications, 2005. ICITA 2005. Third International Conference on
Print_ISBN :
0-7695-2316-1
Type :
conf
DOI :
10.1109/ICITA.2005.5
Filename :
1488873
Link To Document :
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