DocumentCode
1567186
Title
Quality Factor in Resonant Gate Drivers
Author
López, Toni ; Elferich, Reinhold
Author_Institution
Philips Res. Lab., Aachen
fYear
2007
Firstpage
2819
Lastpage
2825
Abstract
Four basic resonant gate driver topologies are analysed in terms of the quality factor that characterises their resonant transitions. Magnitudes of interest are expressed as normalised quantities against those of conventional gate drivers. The formulation turns out to be effective to simplify and compact the governing equations describing the energy loss and switching speed capabilities. Thus, it allows good understanding of the benefits and drawbacks of each topology.
Keywords
Q-factor; driver circuits; power MOSFET; energy loss; quality factor; resonant gate drivers; switching speed capabilities; Circuit topology; Driver circuits; Energy loss; Inductance; Inductors; MOSFETs; Q factor; Resonance; Switches; Zero voltage switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2007. PESC 2007. IEEE
Conference_Location
Orlando, FL
ISSN
0275-9306
Print_ISBN
978-1-4244-0654-8
Electronic_ISBN
0275-9306
Type
conf
DOI
10.1109/PESC.2007.4342466
Filename
4342466
Link To Document