Title :
Thermally limited rate-dependent switching in epitaxial Fe/GaAs
Author :
Moore, T.A. ; Gardiner, S.M. ; Wastlbauer, G. ; Bland, J.A.C.
Author_Institution :
Cavendish Lab., Cambridge Univ., UK
Abstract :
Summary form only given. We obtain values of the sweep rate-dependent coercive field (effective coercivity) from dynamic magneto-optic Kerr effect hysteresis loops for an epitaxial bcc Fe thin film (150 /spl Aring/) on GaAs[001] in the applied field frequency range 0.1-2000 Hz at /spl sim/80 K and at 300 K.
Keywords :
III-V semiconductors; Kerr magneto-optical effect; coercive force; ferromagnetic materials; gallium arsenide; iron; magnetic epitaxial layers; magnetic hysteresis; magnetic switching; metallic epitaxial layers; 0.1 to 2000 Hz; 150 A; 300 K; 80 K; Fe-GaAs; GaAs; GaAs[001]; dynamic magneto-optic Kerr effect hysteresis loops; effective coercivity; epitaxial Fe/GaAs; epitaxial bcc Fe thin film; sweep rate-dependent coercive field; thermally limited rate-dependent switching; Coercive force; Frequency; Gallium arsenide; Hysteresis; Iron; Kerr effect; Laboratories; Magnetooptic effects; Remanence; Transistors;
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
DOI :
10.1109/INTMAG.2002.1000969
