Technology-caused performance limitation of the common-gate LNA

Author

Stücke, Thomas ; Kokozinski, Rainer ; Kolnsberg, Stephan ; Hosticka, Bedrich J.

Author_Institution

Infineon Technol. AG, Neubiberg

fYear

2007

Firstpage

60

Lastpage

63

Abstract

In this paper, the performance limitation of common-gate LNAs (CG-LNAs) caused by short channel effects is presented. The analysis is based on equations, which describes the behavior of the MOSFET including the noise sources in all possible regions of operation. From these equations, the input time constant T_in is defined as one characteristic performance figure of the used CMOS technology. The bias dependent limitation of the noise figure NF and minimum input reflection coefficient min (S_11,dB) is derived in dependence of T_in. The paper shows furthermore the advantage of biasing the CG-LNA in the moderate inversion region.

Keywords

CMOS integrated circuits; MOSFET; integrated circuit noise; low noise amplifiers; CMOS technology; MOSFET; bias dependent limitation; common-gate LNA; minimum input reflection coefficient min; noise figure; noise sources; short channel effects; technology-caused performance limitation; Acoustic reflection; CMOS technology; Equations; Frequency; Impedance; MOSFET circuits; Noise figure; Parasitic capacitance; Telephony; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuit Theory and Design, 2007. ECCTD 2007. 18th European Conference on

Conference_Location

Seville

Print_ISBN

978-1-4244-1341-6

Electronic_ISBN

978-1-4244-1342-3

Type

conf

DOI

10.1109/ECCTD.2007.4529536

Filename

4529536