Amorphous wire & CMOS IC based sensitive micro magnetic sensors utilizing magneto-impedance (MI) and stress-impedance (SI) effects

Author

Mohri, K. ; Uchiyama, T. ; Shen, L.P. ; Honkura, Y. ; Yamamoto, M. ; Panina, L.V.

Author_Institution

Graduate Sch., Electr. Eng., Nagoya Univ., Japan

fYear

2002

Abstract

Summary form only given. Sensitive micro magnetic sensors utilizing the pulse-current Magneto-Impedance effect in almost zero-magnetostrictive amorphous wires connected with CMOS IC circuit (MI sensor) has been successfully developed using the micro machining processes under the support of the Japan Science and Technology Corp. (JST) aiming mainly for automobile applications Commercial supplying of the MI chips and pocketable Milli-gaussmeter has started since 2001 by Aichi Steel Co. and Aichi Micro Intelligent (AMI) Co.

Keywords

CMOS integrated circuits; amorphous magnetic materials; giant magnetoresistance; magnetic sensors; micromachining; micromagnetics; microsensors; CMOS IC based sensitive micro magnetic sensors; amorphous wire magnetic sensors; magneto-impedance effects; micromachining; stress-impedance effects; zero-magnetostrictive amorphous wires; Amorphous magnetic materials; Amorphous materials; Application specific integrated circuits; CMOS integrated circuits; CMOS process; Intelligent sensors; Magnetic circuits; Magnetic sensors; Pulse circuits; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International

Conference_Location

Amsterdam, The Netherlands

Print_ISBN

0-7803-7365-0

Type

conf

DOI

10.1109/INTMAG.2002.1001012

Filename

1001012