DocumentCode :
1567788
Title :
Nonlinear on-chip capacitor characterization
Author :
Sutory, Tomas ; Kolka, Zdenek ; Biolek, Dalibor ; Biolkova, Viera
Author_Institution :
Dept. of Radio Electron., Brno Univ. of Technol., Brno
fYear :
2007
Firstpage :
220
Lastpage :
223
Abstract :
The paper deals with a modification of the CBCM method for nonlinear on-chip capacitance characterization. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the object being measured. A test-chip implementing the method was designed and manufactured in the 0.35 mum CMOS process. It was used for MOSCAP characterization in the full operating voltage range.
Keywords :
CMOS integrated circuits; MOS capacitors; integrated circuit manufacture; CBCM method; CMOS process; DC swept sources; MOSCAP characterization; nonlinear Q-v characteristic; nonlinear on-chip capacitor characterization; Capacitance measurement; Capacitors; Current measurement; Design methodology; MOS devices; MOSFETs; Parasitic capacitance; Q measurement; Switches; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuit Theory and Design, 2007. ECCTD 2007. 18th European Conference on
Conference_Location :
Seville
Print_ISBN :
978-1-4244-1341-6
Electronic_ISBN :
978-1-4244-1342-3
Type :
conf
DOI :
10.1109/ECCTD.2007.4529576
Filename :
4529576
Link To Document :
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