Title :
SiC vs. Si for High Radiation Environments
Author :
Harris, Richard D.
Author_Institution :
California Inst. of Technol., Pasadena
Abstract :
Commercial silicon carbide and silicon Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the I-V characteristics have been observed. Changes in forward bias I-V characteristics are reported for fluences up to 4times1014 p/cm2. For devices of both material types, the series resistance is observed to increase as the fluence increases. The changes in series resistance result from changes in the free carrier concentration due to carrier removal by the defects produced. Calculation of carrier removal rates in both materials reveals that the carrier removal rate in silicon is less than that in silicon carbide, indicating that silicon is the more radiation tolerant material.
Keywords :
Schottky barriers; Schottky diodes; power semiconductor diodes; proton effects; semiconductor device measurement; silicon; silicon compounds; Schottky barrier power diodes; Si; SiC; carrier removal; electron volt energy 203 MeV; forward bias I-V characteristics; free carrier concentration; proton irradiation; radiation tolerant material; resultant displacement damage; series resistance; silicon carbide diodes; silicon diodes; Inductors; Laboratories; NASA; Propulsion; Protons; Schottky barriers; Schottky diodes; Silicon carbide; Space technology; Voltage; Carrier removal rate; I-V characteristics; Schottky diode; displacement damage; proton irradiation; silicon; silicon carbide;
Conference_Titel :
Radiation Effects Data Workshop, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1464-2
DOI :
10.1109/REDW.2007.4342541
