Title :
Total-Dose Effects in InP Devices
Author :
Hansen, D.L. ; Robinson, M.J. ; Lu, F.
Author_Institution :
Boeing Satellite Dev. Center, Los Angeles
Abstract :
Total dose testing was performed on biased and unbiased InP devices using a 60Co source. Photodiodes were tested to a total dose of more than 17 Mrad(Si) and heterojunction bipolar transistors were tested to total doses of more than 3.6 Mrad(Si) and 190 krad(Si) at dose rates of 287 rad(Si)/s and 0.34 rad(Si)/s respectively. For all tests, the devices showed little degradation, indicating that InP technology is sufficiently robust to total dose effects for flight usage.
Keywords :
III-V semiconductors; dosimetry; heterojunction bipolar transistors; indium compounds; photodiodes; radiation effects; semiconductor device testing; 60Co source; InP; biased semiconductor device; heterojunction bipolar transistors; photodiodes; radiation effects; space-based electronics; total dose testing; unbiased semiconductor device; Circuit testing; Degradation; Heterojunction bipolar transistors; Indium phosphide; Photodiodes; Robustness; Satellites; Space technology; Stimulated emission; Telephony; heterojunction bipolar transistors; indium compounds; radiation effects;
Conference_Titel :
Radiation Effects Data Workshop, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1464-2
DOI :
10.1109/REDW.2007.4342542
