Title :
Proton radiation effects on medium/large area Si PIN photodiodes for Optical Wireless Links for Intra-Satellite Communications (OWLS)
Author :
Jiménez, J.J. ; Sánchez-Páramo, J. ; Àlvarez, M.T. ; Domínguez, J.A. ; Oter, J.M. ; Arruego, I. ; Tamayo, R. ; Guerrero, H.
Author_Institution :
Inst. Nacional de Tecnica Aeroespacial (INTA), Torrejon de Ardoz
Abstract :
Components off the shelf (cots) photodiodes suitable for OWLS were irradiated with ~10 to ~60 MeV protons and up to fluences of ~2.5-1012 p/cm2. Electrical and optoelectronic parameters were measured during the test (I-V curves, dark current, responsivity and ideal diode factor). Results on degradation and post-annealing are reported. Preliminary results on the lattice effects are also pointed.
Keywords :
annealing; dark conductivity; lattice constants; optical communication equipment; optical links; optical testing; p-i-n photodiodes; proton effects; satellite links; semiconductor device testing; silicon; Si; components off the shelf photodiodes; dark current; electrical parameters; ideal diode factor; intra-satellite communications; lattice effects; optical wireless links; optoelectronic parameters; photodiode degradation; photodiode responsivity; post-annealing; proton radiation effects; silicon PIN photodiodes; Current measurement; Dark current; Degradation; Diodes; Electric variables measurement; Lattices; OWL; PIN photodiodes; Proton radiation effects; Testing;
Conference_Titel :
Radiation Effects Data Workshop, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1464-2
DOI :
10.1109/REDW.2007.4342543
