Title :
Pulsed and Steady-State Radiation Effects on Single Junction Si and Multiple Junction GaAs Photocells
Author :
Shelton, Jason W. ; Thomes, William J., Jr. ; Stein, David J.
Author_Institution :
Sandia Nat. Lab., Albuquerque
Abstract :
Si single junction photocells manufactured by Sandia National Laboratories and commercially available multiple junction GaAs photocells were tested in a pulsed high-dose mixed gamma-neutron environment. The Si photocells were also tested in steady state gamma environment at two different dose rates.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; gamma-ray effects; neutron effects; photovoltaic cells; semiconductor device testing; semiconductor junctions; silicon; GaAs; Sandia National Laboratories; Si; dose rates; multiple junction gallium arsenide photocells; photovoltaic array; pulsed high-dose mixed gamma-neutron environment; pulsed radiation effects; single junction silicon photocells; steady-state radiation effects; Gallium arsenide; Laboratories; Lighting; Manufacturing; Optical devices; Photovoltaic systems; Radiation effects; Solar power generation; Steady-state; Testing;
Conference_Titel :
Radiation Effects Data Workshop, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1464-2
DOI :
10.1109/REDW.2007.4342544
