Title :
The origins of high mobility and low operation voltage of amorphous oxide channel TFTs
Author :
Kamiya, T. ; Nomura, K. ; Hosono, H.
Author_Institution :
Mater. & Struct. Lab., Tokyo Inst. of Technol., Yokohama
Abstract :
This paper reviews recent progress in AOSs TFT technology and science. The origins of the low voltage operation and the large mobility are discussed in relation with subgap density of states and the density functional theory.
Keywords :
amorphous semiconductors; carrier mobility; indium compounds; low-power electronics; ternary semiconductors; thin film transistors; InGaZnO4; density functional theory; high mobility TFT; low voltage amorphous oxide channel TFT; subgap density; Amorphous materials; Annealing; Charge carrier density; Density functional theory; Flat panel displays; Liquid crystal displays; Low voltage; Materials science and technology; Prototypes; Thin film transistors;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688488
