Title :
ZnO:Al based transparent thin film transistors
Author :
Lee, Ching-Ting ; Shien, Wen-Ming ; Hsin-Ying Lee ; Chou, Cheng-Hsu
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
Abstract :
In this work, the transparent thin film transistors (TTFTs) with slightly Al-doped ZnO films as the channel layers were fabricated by a magnetron radio frequency co-sputtering system. The performances of the TTFTs with various thicknesses of the channel layers were characterized. When the thickness of the channel layer was 25 nm, the field-effect carrier mobility and the on/off current ratio of the TTFTs were as high as 32.5 cm2/V-s and 107, respectively. The DC characteristics of the ZnO:Al based TTFTs at different temperatures were also measured, showing a reasonable thermal stability.
Keywords :
II-VI semiconductors; aluminium; carrier mobility; field effect transistors; semiconductor growth; sputter deposition; thermal stability; thin film transistors; transparency; wide band gap semiconductors; zinc compounds; ZnO:Al; channel layers; field-effect carrier mobility; magnetron radiofrequency cosputtering; on-off current ratio; size 25 nm; thermal stability; transparent thin film transistors; Electrodes; Indium tin oxide; Liquid crystal displays; Radio frequency; Sputtering; Temperature measurement; Thermal stability; Thin film transistors; Voltage; Zinc oxide; ZnO:Al; magnetron radio frequency co-sputtering system; transparent thin film transistors;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688490
