• DocumentCode
    1568156
  • Title

    Radiation Hardness Characterization of a 130nm Technology

  • Author

    Hafer, C. ; Lahey, M. ; Gardner, H. ; Harris, D. ; Jordan, A. ; Farris, T. ; Johnson, M.

  • Author_Institution
    Aeroflex Colorado Springs, Colorado Springs
  • Volume
    0
  • fYear
    2007
  • Firstpage
    123
  • Lastpage
    130
  • Abstract
    Intrinsic and RadHard-by-Design hardness characterization has been performed on a 130 nm fab process. Hardness results from test chips produced in phase II of a NASA Goddard Space Flight Center contract are presented.
  • Keywords
    integrated circuit testing; nanoelectronics; radiation hardening (electronics); NASA Goddard Space Flight Center; RadHard-by-Design hardness characterization; fabrication process; integrated circuits; intrinsic hardness characterization; radiation hardness characterization; size 130 nm; Circuit testing; Contracts; Fabrication; Flip-flops; Logic testing; NASA; Radiation effects; Single event upset; Space technology; Springs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2007 IEEE
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-1464-2
  • Type

    conf

  • DOI
    10.1109/REDW.2007.4342552
  • Filename
    4342552
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1568156