Title :
Total ionizing dose and single event effect studies of a 0.25μm CMOS serializer ASIC
Author :
Xiang, Chu ; Liu, Tiankuan ; Yang, Cheng-An ; Gui, Ping ; Chen, Wickham ; Zhang, Junheng ; Zhu, Peiqing ; Ye, Jingbo ; Stroynowski, Ryszard
Author_Institution :
Southern Methodist Univ., Dallas
Abstract :
A 0.25 μm CMOS serializer ASIC, designed using radiation tolerant layout practice, was exposed to proton beam at various flux levels and accumulated fluence over 1.9times1015 protons/cm2 (100 Mrad (Si)). The ASIC survived this total ionizing dose (TID) with no degradation in function. Single event effect (SEE) cross-sections are also calculated.
Keywords :
CMOS integrated circuits; application specific integrated circuits; proton effects; CMOS serializer ASIC; proton beam; radiation tolerant layout; single event effect studies; size 0.25 mum; total ionizing dose; Application specific integrated circuits; CMOS technology; Large Hadron Collider; Optical receivers; Optical transmitters; Particle beams; Protons; Single event upset; System testing; Vertical cavity surface emitting lasers;
Conference_Titel :
Radiation Effects Data Workshop, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1464-2
DOI :
10.1109/REDW.2007.4342553
