Title :
Total Ionizing Dose (TID) Tests on Non-Volatile Memories: Flash and MRAM
Author :
Nguyen, D.N. ; Irom, F.
Author_Institution :
California Inst. of Technol., Pasadena
Abstract :
We report on TID tests of magnetoresistive random access memory (MRAM), and advanced 4 Gbit flash memories from three manufacturers. Both in-situ and biased interval irradiations were used to characterize the response of the total accumulated dose failures.
Keywords :
flash memories; integrated circuit testing; magnetoresistive devices; radiation hardening (electronics); random-access storage; space vehicle electronics; MRAM memories; biased interval irradiations; flash memories; in-situ irradiations; magnetoresistive random access memory; nonvolatile memories; radiation hardening; total accumulated dose failures; total ionizing dose tests; CMOS technology; Electrodes; Magnetic separation; Magnetic tunneling; Magnetoresistance; Nonvolatile memory; Polarization; Random access memory; Switches; Testing; Flash; In-situ; MRAM; TID;
Conference_Titel :
Radiation Effects Data Workshop, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1464-2
DOI :
10.1109/REDW.2007.4342564
