• DocumentCode
    1568362
  • Title

    Dynamic Single Event Upset Characterization of the MT48LC4M32B2TG-6 SDRAM Using Proton Irradiation

  • Author

    Hiemstra, David M. ; Pranajaya, Freddy

  • Author_Institution
    MDA Space Missions, Brampton
  • Volume
    0
  • fYear
    2007
  • Firstpage
    208
  • Lastpage
    210
  • Abstract
    Dynamic single event upset characterization of the MT48LC4M32B2TG-6 SDRAM using proton irradiation is presented. The device´s upset rate in the space radiation environment is estimated.
  • Keywords
    DRAM chips; aerospace testing; integrated circuit testing; proton effects; MT48LC4M32B2TG-6 SDRAM; device upset rate; dynamic single event upset characterization; proton irradiation; space radiation environment; Clocks; Manufacturing; Particle beams; Protons; Prototypes; SDRAM; Single event upset; Software prototyping; Test facilities; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2007 IEEE
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-1464-2
  • Type

    conf

  • DOI
    10.1109/REDW.2007.4342567
  • Filename
    4342567
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1568362