Title :
A 90 nm CMOS receiver front-end for GSM/GPRS/EDGE
Author :
Fang, Sher Jiun ; Dulger, Fikret ; Bellaouar, Abdellatif ; Frechette, Michel
Author_Institution :
RF Design Group, Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A GSM/GPRS/EDGE receiver front-end realized in 90 nm CMOS technology is presented. With a low power of 46 mW, it achieved 31.5 dB gain, 2.1 dB integrated noise figure, 5 dB of noise figure under blocking condition and -9.5 dBm of inband IIP3. The measured LO leakage at the LNA input is 125 dBm. Total active area occupies 1.4 mm2.
Keywords :
3G mobile communication; CMOS integrated circuits; cellular radio; low noise amplifiers; packet radio networks; radiofrequency integrated circuits; 2.1 dB; 31.5 dB; 46 mW; 5 dB; 90 nm; CMOS receiver front-end; EDGE; GPRS; GSM; LNA; Analog-digital conversion; Baseband; CMOS technology; GSM; Ground penetrating radar; Low pass filters; Noise figure; Radio frequency; Radiofrequency amplifiers; Receivers;
Conference_Titel :
Radio and Wireless Symposium, 2006 IEEE
Print_ISBN :
0-7803-9412-7
DOI :
10.1109/RWS.2006.1615109
