Title :
Ge photodetector integrated with Ge-on-insulator MOSFET by using oxidation condensation technique
Author :
Takenaka, M. ; Tanabe, S. ; Dissanayake, S. ; Sugahara, S. ; Takagi, S.
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo
Abstract :
Ge photodetectors and Ge MOSFETs were integrated on Ge-on-Insulator substrate by using oxidation condensation technique. The responsivity of photodetectors up to 1575 nm and excellent switching of MOSFETs were demonstrated.
Keywords :
MOSFET; condensation; elemental semiconductors; germanium; oxidation; photodetectors; semiconductor-insulator boundaries; Ge; Ge photodetector; Ge-on-insulator MOSFET; oxidation condensation technique; switching; Atomic layer deposition; Fabrication; Germanium silicon alloys; Large scale integration; MOSFET circuits; Monolithic integrated circuits; Oxidation; Photodetectors; Silicon germanium; Substrates;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688516
