Title :
Fabrication of Ge nanocrystals doped silica-on-silicon waveguides and observation of their strong quantum confinement effect
Author :
Ou, Haiyan ; Rottwitt, Karsten
Author_Institution :
Dept. of Photonics Eng., Tech. Univ. of Denmark, Lyngby
Abstract :
Standard silica-on-silicon waveguides with a core doped by Ge nanocrystals were fabricated using PECVD and RIE. Transmission of the waveguide was measured, and strong absorption peaks at 1056.8 nm, 1406 nm and 1263.2 nm were observed.
Keywords :
elemental semiconductors; germanium; nanostructured materials; optical waveguides; plasma CVD; sputter etching; PECVD; RIE; absorption peaks; nanocrystals; silica-on-silicon waveguides; strong quantum confinement; waveguide transmission; Fiber nonlinear optics; Nanocrystals; Nonlinear optics; Optical device fabrication; Optical devices; Optical films; Optical waveguide theory; Optical waveguides; Potential well; Stimulated emission;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688517
