Title :
Hybrid InP-SiGe photoreceiver for the access network
Author :
Xu, L. ; van Heijningen, M. ; van der Bent, G. ; Urban, P.J. ; Leijtens, X.J.M. ; Smalbrugge, E. ; de Vries, T. ; Nötzel, R. ; Oei, Y.S. ; de Waardt, H. ; Smit, M.K.
Author_Institution :
COBRA Res. Inst., Tech. Univ. Eindhoven, Eindhoven
Abstract :
In this paper, we present a low cost and polarization independent photoreceiver which is part of the optical network unit (ONU) for the fiber access network. It consists of one InP-photodetector and a low cost SiGe amplifier. It operates error free with 223 - 1 PRBS word length at 1.25 Gbit/s with -13 dBm input optical power before the fiber chip coupling whose loss is about 5 dB. From the rise and fall time shown in measured eye diagram, it is estimated that it will also operate up to 2.5 Gbit/s.
Keywords :
Ge-Si alloys; III-V semiconductors; indium compounds; optical fibre communication; optical fibre couplers; optical receivers; photodetectors; 223 - 1 PRBS; InP; InP-photodetector; SiGe; SiGe amplifier; bit rate 1.25 Gbit/s; fiber access network; fiber chip coupling; hybrid InP-SiGe photoreceiver; optical network unit; Costs; Germanium silicon alloys; Optical amplifiers; Optical coupling; Optical fiber losses; Optical fiber networks; Optical fiber polarization; Optical network units; Silicon germanium; Stimulated emission;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688518
