DocumentCode
1568716
Title
Highly reliable guardring-free InAlAs avalanche photodiodes
Author
Ishimura, E. ; Yagyu, E. ; Nakaji, M. ; Ihara, S. ; Itamoto, H. ; Yoshiara, K. ; Aoyagi, T. ; Ishikawa, T.
Author_Institution
High Freq. & Opt. Device Works, Mitsubishi Electr. Corp.
fYear
2008
Firstpage
155
Lastpage
156
Abstract
The InAlAs avalanche photodiodes that employ a guardring-free structure demonstrate record high reliability of over 10000 hours at a high temperature of 200degC with no degradation in the surfaced pn-junction.
Keywords
III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; optical receivers; p-n heterojunctions; semiconductor device reliability; InAlAs; avalanche photodiodes; guardring-free structure; high-sensitivity receivers; reliability; surfaced pn-junction; temperature 200 C; Avalanche photodiodes; Dark current; Degradation; Distributed Bragg reflectors; Frequency; Indium compounds; Indium gallium arsenide; Indium phosphide; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location
Acapulco
Print_ISBN
978-1-4244-1931-9
Electronic_ISBN
978-1-4244-1932-6
Type
conf
DOI
10.1109/LEOS.2008.4688535
Filename
4688535
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