Impact of voltage-dependent responsivity on photodiode non-linearity

Author

Beling, A. ; Pan, H. ; Chen, H. ; Campbell, J.C. ; Hastings, A. ; Tulchinsky, D.A. ; Williams, K.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA

fYear

2008

Firstpage

157

Lastpage

158

Abstract

The change of responsivity with applied bias voltage of an InGaAs/InP modified charge compensated uni-traveling carrier photodiode has been studied over a wide range of input wavelengths. The measured wavelength-dependence suggests that the primary reasons for the observed characteristics are both the Franz-Keldysh effect and impact ionization. Based on the experimental results we estimated a photodiodepsilas low-frequency third order intercept point (IP3) of 61 dBm when choosing an appropriate input wavelength.

Keywords

III-V semiconductors; impact ionisation; indium compounds; photodiodes; Franz-Keldysh effect; InGaAs-InP; impact ionization; low frequency third order intercept point; modified charge compensated unitraveling carrier photodiode; photodiode nonlinearity; voltage-dependent responsivity; Fiber nonlinear optics; Indium gallium arsenide; Indium phosphide; Laser tuning; Nonlinear optics; Optical saturation; Photoconductivity; Photodiodes; Voltage; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the

Conference_Location

Acapulco

Print_ISBN

978-1-4244-1931-9

Electronic_ISBN

978-1-4244-1932-6

Type

conf

DOI

10.1109/LEOS.2008.4688536

Filename

4688536